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| Power transistor (9010V, 3A) 2SC5060 Features 1) Built-in zener diode between collector and base. 2) Zener diode has low voltage dispersion. 3) Strong protection against reverse power surges due to "L" loads. 4) Darlington connection for high DC current gain. 5) Built-in resistor between base and emitter. 6) Built-in damper diode. Inner circuit C Dimensions (Unit : mm) 2.5 6.8 0.65Max. 1.0 0.5 2.54 2.54 0.9 (1) (2) (3) 1.05 14.5 4.4 0.45 Taping specifications ROHM : ATV B R1 B : Base C : Collector E : Emitter R1 R2 R2 E 3k 1k (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 9010 9010 6 1 2 1 150 -55 to +150 Unit V V V A(DC) A(Pulse) W C C 1 2 1 Single pulse Pw=10ms 2 Printed circuit board : 1.7 mm thick, collector copper plating at least 100mm2. Packaging specifications and hFE Type Package hFE Code Basic ordering unit (pieces) 2SC5060 ATV M TV2 2500 Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Output capacitance Turn-on time Storage time Fall time Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Min. 80 80 6 - - 1000 - - - - - - - Typ. - - - - - - - - 80 20 0.2 5 0.6 Max. 100 100 - 10 3 2500 1.5 2 - - - - - Unit V V V A mA - V V MHz pF s s s Conditions IC=50A IC=1mA IE=5mA VCB=70V VEB=5V VCE=3V, IC=0.5A IC/IB=500mA/1mA IC/IB=500mA/1mA VCB=5V, IE=-0.1A, f=30MHz VCE=10V, IE=0A, f=1MHz IC=0.8A, RL=50 IB1= -IB2=8mA VCC 40V 1 1 2 1 Measured using pulse current. 2 Transition frequency of the device. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 1/3 2009.12 - Rev.B 2SC5060 Electrical characteristics curves 10 Data Sheet VCE=3V COLLECTOR CURRENT : IC (A) 2.0 Ta=25C 0.7mA 2.0 COLLECTOR CURRENT : IC (A) 2 1 Ta= 100 C 1.6 0.4 mA 1.6 1m 0.8mA COLLECTOR CURRENT : IC (A) A 5 0.9mA 1m A mA 0.6 mA 0.5 0.7mA mA mA 0.5 0.4 0.3m A A 0.2m 0.5 0.2 0.1 0.05 0.02 0.01 0.6 0.8 1.2 0.3mA 0.2mA 1.2 -25C 25C 0.1mA 0.8 0.8 0.1mA 0.4 0.4 1.0 1.2 1.4 1.6 1.8 2.0 2.2 0 IB=0mA 0 1 2 3 4 5 0 IB=0mA 0 4 8 12 Ta=25C 16 20 BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Ground emitter propagation characteristics Fig.2 Ground emitter output characteristics( ) Fig.3 Ground emitter output characteristics( ) 10k 5k Ta=25C VCE=5V 4V 3V 10k 5k VCE=3V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 100 50 20 10 5 2 1 0.5 0.2 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 Ta=25C DC CURRENT GAIN : hFE 2k 1k 500 200 100 50 20 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 DC CURRENT GAIN : hFE 2k 1k 500 200 100 50 20 Ta C 00 C =1 25 C 5 -2 IC/IB=1000 500 5 10 10 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) 2 5 10 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current ( ) Fig.5 DC current gain vs. collector current( ) Fig.6 Collector-emitter saturation voltage vs. collector current 100 50 20 10 5 2 1 0.5 0.2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) BASE SATURATION VOLTAGE : VCE(sat) (V) IC/IB=500 1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 Ta=25C f=1MHz IE=0A TURN ON TIME : ton (s) STORAGE TIME : tstg (s) FALL TIME : tf (s) 100 50 20 10 5 IC=100IB1= -100IB2 Ta=25C Ta= -25C 25C 100C -25C 25C 100C 0.05 0.1 0.2 0.5 1 2 5 10 VBE(sat) tstg 2 1 0.5 0.2 0.1 0.01 0.02 tf VCE(sat) 0.1 0.01 0.02 ton 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (A) COLLECTOR TO BASE VOLTAGE : VCB (A) COLLECTOR CURRENT : IC (A) Fig.7 Collector-emitter saturation voltage Base-emitter saturation voltage vs. collector current Fig.8 Collector output capacitance vs. collector-base voltage Fig.9 Switching characteristics www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 2/3 2009.12 - Rev.B 2SC5060 Data Sheet 10 RL=50 VIN IC(MAX) (Pulse) DC COLLECTOR CURRENT : IC (A) 5 2 1 500m 200m 100m 50m 20m +VBB IB1 IC T.U.T VCC ~ 40V - ms =1 ms Pw 10 ms 0 10 IB2 PW PW ~ 50 S - Duty cycle 1% Ta=25C Single nonrepetitive 10m pulse 0.1 0.2 0.5 1 2 5 10 20 50 100 -VBB IB1 Base current waveform IB2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area 90% Collector current waveform IC 10% ton tstg tf Fig.11 Switching time mesurement circuit www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. 3/3 2009.12 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com (c) 2009 ROHM Co., Ltd. All rights reserved. R0039A |
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